SOITEC : Soitec SOI wafers at the heart of new Renesas SOTBTM Energy Harvesting Chipset
14 November 2018 - 5:46PM
Soitec SOI wafers at the heart
of new Renesas SOTBTM Energy Harvesting
Chipset
Soitec innovative substrates open up a
self-powered future for IoT devices
Bernin (Grenoble), November 14, 2018
- Soitec (Euronext Paris), a world leader in designing and
manufacturing innovative semiconductor materials, announced today
that a special version of its fully depleted silicon-on-insulator
(FD-SOI) wafer product line has been selected by Renesas
Electronics Corporation ("Renesas", TSE: 6723) for 65nm ultra low
power SOTBTM(Silicon-On-Thin-Buried-Oxide) processes. As a result,
Renesas' new SOTB-based chipset overcomes the energy constraints of
IoT devices and reduces the power consumption to approximately
one-tenth that of the existing products in the market today, making
the chipset perfectly suited for extreme low-power and energy
harvesting applications.
Renesas has developed its energy harvesting chip
using its unique SOTB process technology that achieves both low
active current of 20 µA/MHz and deep standby current of 150 nA.
This extreme low power performance makes it possible to realize
maintenance-free connected IoT sensing devices at the endpoint. For
consumer electronics developers mounting chips, achieving
maintenance-free devices by energy harvesting capabilities within
these sensor nodes is becoming increasingly critical,
especially in wearable devices, smart home applications,
watches, portable appliances and infrastructure monitoring
systems.
Renesas chose Soitec substrates for its
ultrathin and uniform active layers, the thinnest ever buried oxide
(BOX) under the thin crystal silicon (SOI) produced today within
high volume manufacturing. As a result, Renesas' SOTB chipsets
offer enhanced control of the transistor electrostatics and
reductions in both the standby and active currents to levels never
before achieved. Additionally, Renesas has successfully delivered
the dopant-less channel to suppress Vth variability for the
ultra-low voltage operation, and the ultra-low power back bias
control to reduce the standby current at the same time.
"Soitec's close collaboration with Renesas'
teams on the development of SOTB technology is further proof that
fully depleted devices will revolutionize our daily life." said
Christophe Maleville, Soitec's Executive Vice President, Digital
Electronics Business Unit. "We are excited to be part of this new
Renesas SOTB product family and look forward to supporting the
growing ecosystem innovating ultra-low power devices."
"To spur innovations in IoT and consumer
applications, we have integrated our exclusive energy-harvesting
SOTB technologies into our Energy Harvest Controller," said Mr.
Toru Moriya, Vice President of Renesas' Home Business Division,
Industrial Solutions Business Unit. "We are confident that our SOTB
technology built on Soitec's ultrathin substrates can deliver
unmatched capabilities for developing maintenance-free IoT devices
that never require power supply or replacement, giving rise to a
new IoT global market based on endpoint intelligence."
# # #
About Soitec
Soitec (Euronext, Tech 40 Paris) is a world
leader in designing and manufacturing innovative semiconductor
materials. The company uses its unique technologies and
semiconductor expertise to serve the electronics markets. With more
than 3,000 patents worldwide, Soitec's strategy is based on
disruptive innovation to answer its customers' needs for high
performance, energy efficiency and cost competitiveness. Soitec has
manufacturing facilities, R&D centers and offices in Europe,
the U.S. and Asia. Soitec and Smart Cut are registered trademarks
of Soitec. For more information, please
visit www.soitec.com and follow us on Twitter:
@Soitec_EN
Soitec and Smart Cut are registered trademarks
of Soitec. SOTB is a trademark of Renesas Electronics
Corporation.
Soitec Press Contact: Erin Berard |
+33 6 80 36 53 40 | erin.berard@soitec.com
- Download the press release in PDF.pdf
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