Transphorm’s SuperGaN at PCIM 2024: Surpassing SiC and e-mode GaN Capabilities in High Power Systems
20 Mai 2024 - 2:30PM
Business Wire
Lower Losses, Higher Performance Delivered by
Transphorm’s Normally-off d-mode Platform Enables Electric Vehicle,
Datacenter/AI, and Other Multi-market Power Systems, Along with
Groundbreaking GaN Product Innovations
Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN
power semiconductors, announced today that its PCIM 2024 showcase
will underscore its ability to outperform competitive wide bandgap
technologies in higher power systems. For example, Transphorm’s
normally-off d-mode SuperGaN® platform delivers higher electron
mobility resulting in lower crossover losses versus Silicon
Carbide—making it more a cost-effective, higher performing solution
for various electric vehicle, datacenter/AI, infrastructure,
renewable energy, and other broad industrial applications. To learn
more, visit Transphorm during PCIM in Hall 7, Stall 108 during June
11 to 13, 2024.
Transphorm SuperGaN FETs are in production in a wide range of
customer products crossing the power spectrum from low 45 W power
adapters to higher power 7.5 kW PSUs. Many of these customer
products are the first publicly recognized GaN-based systems of
their kind and uniquely demonstrate advantages enabled only by the
SuperGaN platform. Examples include the previously mentioned
liquid-cooled 7.5 kW PSU for mission-critical datacenter/blockchain
applications; a 2.7 kW server CRPS with > 82 W/in3 power density
(highest in any GaN power system available today); and 2.2 kW and 3
kW rack-mount 1U uninterruptible power supplies (UPSes). These
design wins illustrate Transphorm’s ability to drive GaN into the
various application markets composing an estimated GaN TAM of $8
billion by 2028.
In addition to real-world customer products, Transphorm
continues to lead in technological achievements having recently
demonstrated a 5 microsecond short-circuit withstand time, a
bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire
device.
On-site demonstrations will include Transphorm solutions for 2-
and 3-wheeler electric vehicle chargers along with customer PSUs
for renewable energy systems, data centers, and more.
Speaking Engagement
Learn more about how Transphorm’s GaN solutions outperform
competitive technologies and enable cross-industry innovations
during the Bodo’s Power Systems session.
Panel: GaN Wide Bandgap Design, the
Future of Power Speaker: Philip Zuk, Senior Vice President,
Business Development and Marketing Date: June 12
Time: 2:20 – 3:20 p.m. CEST Location: Hall 7, Stall
743
One Core Platform, Crossing the Power Spectrum
Transphorm is the leading GaN power semiconductor company
differentiated by its technology’s:
Manufacturability: Vertically
integrated owning the EPI design, wafer process, and FET die
design. Designability: Offering well-known, Industry
Standard packages and Performance packages while partnering with
global customers for easier, quicker system development.
Drivability: Offering devices that are driven like silicon
and pair with off-the-shelf controllers and drivers while requiring
minimal external circuitry. Reliability: Still leading the
industry with a current FIT rate of < 0.05 across more than 300
billion field hours of operation in low to high power
applications.
Meet With Us
To schedule a meeting with Transphorm during the show, please
contact vipin.bothra@transphormusa.com.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs
and manufactures high performance and high reliability GaN
semiconductors for high voltage power conversion applications.
Having one of the largest Power GaN IP portfolios of more than
1,000 owned or licensed patents, Transphorm produces the industry’s
first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor
devices. The Company’s vertically integrated device business model
allows for innovation at every development stage: design,
fabrication, device, and application support. Transphorm’s
innovations move power electronics beyond the limitations of
silicon to achieve over 99% efficiency, 50% more power density and
20% lower system cost. Transphorm is headquartered in Goleta,
California and has manufacturing operations in Goleta and Aizu,
Japan. For more information, please visit www.transphormusa.com.
Follow us on Twitter @transphormusa and WeChat at
Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc.
All other trademarks are the property of their respective
owners.
View source
version on businesswire.com: https://www.businesswire.com/news/home/20240520019693/en/
Heather Ailara +1.973.567.6040
heather.ailara@transphormusa.com
Transphorm (NASDAQ:TGAN)
Historical Stock Chart
Von Mai 2024 bis Jun 2024
Transphorm (NASDAQ:TGAN)
Historical Stock Chart
Von Jun 2023 bis Jun 2024