SOITEC: STMicroelectronics and Soitec cooperate on SiC substrate manufacturing technology
01 Dezember 2022 - 08:00AM
GlobeNewswire Inc.
SOITEC: STMicroelectronics and Soitec cooperate on SiC substrate
manufacturing technology
STMicroelectronics and Soitec
cooperate on SiC substrate
manufacturing technology
- Agreement to qualify Soitec technology for future 200mm SiC
substrate production
- Key enabling semiconductor technology supports the transition
to electric mobility and improved energy efficiency of industrial
systems
Geneva (Switzerland) and
Bernin (France), December
1, 2022 — STMicroelectronics (NYSE: STM), a global
semiconductor leader serving customers across the spectrum of
electronics applications, and Soitec (Euronext Paris), a leader in
designing and manufacturing innovative semiconductor materials,
announce the next stage of their cooperation on Silicon Carbide
(SiC) substrates, with the qualification of Soitec’s SiC substrate
technology by ST planned over the next 18 months. The goal of this
cooperation is the adoption by ST of Soitec’s SmartSiC™ technology
for its future 200mm substrate manufacturing, feeding its devices
and modules manufacturing business, with volume production expected
in the midterm.
“The transition to 200mm SiC wafers will bring
substantial advantages to our automotive and industrial customers
as they accelerate the transition toward electrification of their
systems and products. It is important in driving economies of scale
as product volumes ramp,” said Marco Monti, President
Automotive and Discrete Group, STMicroelectronics. “We have
chosen a vertically integrated model to maximize our know-how
across the full manufacturing chain, from high-quality substrates
to large-scale front- and back-end production. The goal of the
technology cooperation with Soitec is to continue to improve our
manufacturing yields and quality.”
“The automotive industry is facing major
disruption with the advent of electric vehicles. Our cutting-edge
SmartSiC™ technology, which adapts our unique SmartCut™ process to
silicon carbide semiconductors, will play a key role in
accelerating their adoption,” said Bernard Aspar, Chief Operating
Officer of Soitec. “The combination of Soitec’s SmartSiC™
substrates with STMicroelectronics’ industry-leading silicon
carbide technology and expertise is a game-changer for automotive
chip manufacturing that will set new standards.”
Silicon Carbide (SiC) is a disruptive compound
semiconductor material with intrinsic properties providing superior
performance and efficiency over silicon in key, high-growth power
applications for electric mobility and industrial processes, among
others. It allows for more efficient power conversion, lighter and
more compact designs, and overall system-design cost savings – all
key parameters and factors for success in automotive and industrial
systems. Transitioning from 150mm to 200mm wafers will enable a
substantial capacity increase, with almost twice the useful area
for manufacturing integrated circuits, delivering 1.8 – 1.9 times
as many working chips per wafer.
SmartSiC™ is a proprietary Soitec technology
which uses Soitec proprietary SmartCut™ technology, to split a thin
layer of a high quality SiC ‘donor’ wafer, and bond it on top
of a low resistivity ‘handle’ polySiC wafer. The engineered
substrate then improves device performance and manufacturing
yields. The prime quality SiC ‘donor’ wafer can be reused multiple
times, significantly reducing the overall energy consumption
required to produce it.
About STMicroelectronics
At ST, we are 48,000 creators and makers of
semiconductor technologies mastering the semiconductor supply chain
with state-of-the-art manufacturing facilities. An integrated
device manufacturer, we work with more than 200,000 customers and
thousands of partners to design and build products, solutions, and
ecosystems that address their challenges and opportunities, and the
need to support a more sustainable world. Our technologies enable
smarter mobility, more efficient power and energy management, and
the wide-scale deployment of the Internet of Things and
connectivity. ST is committed to becoming carbon neutral by 2027.
Further information can be found at www.st.com.
For further information, please contact:
MEDIA RELATIONSAlexis BretonCorporate External
CommunicationsTel: + 33 6 59 16 79 08alexis.breton@st.com
INVESTOR RELATIONSCéline BerthierGroup VP, Investor
RelationsTel: +41 22 929 58 12celine.berthier@st.com
About SoitecSoitec (Euronext,
Tech 40 Paris) is a world leader in designing and manufacturing
innovative semiconductor materials. The company uses its unique
technologies to serve the electronics markets. With more than 3,700
patents worldwide, Soitec’s strategy is based on disruptive
innovation to meet its customers’ needs for high performance,
energy efficiency and cost competitiveness. Soitec has
manufacturing facilities, R&D centers and offices in Europe,
the United States and Asia. Fully committed to sustainable
development, Soitec adopted in 2021 its corporate purpose to
reflect its engagements: “We are the innovative soil from which
smart and energy efficient electronics grow into amazing and
sustainable life experiences.” For more information please visit:
www.soitec.com.
Soitec, SmartSiC™ and SmartCut™ are registered trademarks of
Soitec
For further information, please contact:
MEDIA RELATIONSCaroline SasiaSenior Vice President, Head of
Communications & Chief of StaffTel: +33 6 11 30 36
71caroline.sasia@soitec.com
INVESTOR RELATIONSSteve BabureckSenior Vice President, Corporate
Development & Investor RelationsTel: + 33 6 16 38 56
27steve.babureck@soitec.com
- ST Soitec SiC Cooperation_EN_Press Release_
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